unisonic technologies co., ltd 2sa1627a pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r217-004.d pnp epitaxial silicon transistor ? description the utc 2sa1627a is designed for general purpose amplifier and high speed switching applications. ? features * high voltage * low collector saturation voltage. * high-speed switching 1 to-252 to-126 to-126c 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sa1627al-x-t60-k 2SA1627AG-X-T60-K to-126 e c b bulk 2sa1627al-x-t6c-k 2sa1627ag-x-t6c-k to-126c e c b bulk 2sa1627al-x-tn3-r 2sa1627ag-x-tn3-r to-252 b c e tape reel 2sa1627al-x-tn3-t 2sa1627ag-x-tn3-t to-252 b c e tube (1) k: bulk, r: tape reel, t: tube (2) t6c: to-126c, t60: to-126, tn3: to-252 (3) x: reference to classification of h fe1 (4) halogen free, l: lead free 2sa1627al -x -t6c -k (1)packing type (2)package type (3)rank (4)lead free
2sa1627a pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r217-004.d ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -600 v collector-emitter voltage v ceo -600 v emitter-base voltage v ebo -7.0 v collector power dissipation to-126/to-126c p c 1.0 w to-252 1.9 collector current (dc) i c -1.0 a collector current (pulse) (note 2) i cp -2.0 a junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. pw Q 10ms, duty cycle Q 50% ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb = -600v, i e =0 -10 a emitter cut-off current i ebo v eb = -7.0v, i c =0 -10 a dc current gain (note 2) h fe1 v ce = -5.0v, i c = -0.1a 30 58 120 h fe2 v ce = -5.0v, i c = -0.5a 4 19 collector-emitter satura tion voltage(note) v ce ( sat ) i c = -0.3a, i b = -0.06a -0.28 -1.5 v base-emitter saturati on voltage(note) v be ( sat ) i c = -0.3a, i b = -0.06a -0.85 -1.2 v gain bandwidth product f t v ce = -10v, i e =0.1a 10 28 mhz output capacitance c ob v cb = -10v, i e =0, f=1.0mhz 42 50 pf turn-on time t on i c =-0.5a, r l =500 ? , i b1 = -i b2 = -0.1a, v cc =-250v 0.1 0.5 s storage time t syg 3.5 5.0 s fall time t f 0.08 0.5 s note: pulsed pw Q 350s,duty cycle Q 2% ? classification of h fe1 rank m l k range 30-60 40-80 60-120
2sa1627a pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r217-004.d ? typical characteristics -2.0 0 collector current vs. collector to emitter voltage collector current, i c (ma) collector to emitter voltage, v ce (v) -6.0 -10 -4.0 -8.0 0 -20 -40 -60 -80 -100 i b =1.8ma i b =1.6ma i b =1.4ma i b =1.2ma i b =1.0ma i b =0.8ma i b =0.6ma i b =0.4ma i b =0.2ma i b = 2 . 0 m a -0.005 -0.002 dc current gain vs. collector current dc current gain, h fe collector current, i c (a) -0.1 -0.02 -0.5 1 10 30 100 300 1000 3 -0.01 -0.05 -2.0 -0.2 -1.0 v ce =-5.0v collector current vs. base to emitter voltage base to emitte r voltage, v be (v) -0.01 -0.1 -0.3 -1.0 0 -0.4 -0.8 -1.2 -1.6 collector current, i c (ma) -0.03 -0.003 -0.2 -0.6 -1.0 -1.4 v ce =-5.0v collector and base saturation voltage vs. collector current collector current, i c (a) -0.1 -0.3 -1.0 -3.0 -0.005 -0.01 -0.05 -0.2 collector saturation voltage, v ce(sat) (v) base saturation voltage, v be(sat) (v) -0.03 -0.02 -0.1 -0.5 i c =5i b v be(sat) v ce(sat) output capacitance, c ob (pf) collector power dissipation, p c (w)
2sa1627a pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r217-004.d ? typical characteristics(cont.) turn off time vs. collector current collector current, i c (a) 0.2 1.0 2.0 5.0 -0.03 -0.1 -0.3 -1.0 -3.0 switching time, t sw (s) 0.5 0.1 i c /i b =5 v ce =-250v i b1 =i b2 t stg t f gain bandwidth product vs. collector current collector current, i c (ma) 2.0 10 20 100 -0.002 -0.005 -0.02 -0.05 -0.2 gain bandwidth product, f t (mhz) 5.0 1.0 v cb =-5.0v 50 -0.01 -0.1 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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